The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 1985

Filed:

Sep. 27, 1983
Applicant:
Inventors:

Cheryl B Field, Granite Springs, NY (US);

Russell C Lange, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; G03F / ;
U.S. Cl.
CPC ...
430314 ; 430317 ; 430323 ; 430324 ; 430325 ; 430328 ; 430330 ;
Abstract

A method for providing very narrow resolvable line widths on a semiconductor substrate surface involves initial overexposure of a positive working photoresist through a mask so as to not only expose the portions of the photoresist corresponding to the transparent areas of the mask but to also expose the outer periphery of the photoresist areas corresponding to the opaque areas of the mask. Through subsequent processing, the areas of the substrate surface corresponding to the originally unexposed areas of the photoresist are made available for use in semiconductor fabrication, such as areas to be oxidized to function as narrow electrical isolation areas.


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