The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1985
Filed:
Dec. 30, 1982
Satya N Chakravarti, Hopewell Junction, NY (US);
Paul L Garbarino, Ridgefield, CT (US);
Donald A Miller, Fishkill, NY (US);
IBM Corporation, Hopewell Junction, NY (US);
Abstract
A testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells; the testing structure includes two large gate-controlled diodes, each diode having a diffused junction which is substantially identical with that of the other diode, the gates of the diodes having different perimeter-to-area ratios, such that when testing is carried out, the leakage current components due to the contribution of the thin oxide area can be isolated from the perimeter-contributed components of the isolating thick oxide; dynamic testing can also be performed and, because of the small area for the test site, an 'on chip' amplifier can be provided at the site.