The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1985
Filed:
Sep. 13, 1983
Applicant:
Inventors:
Norio Anzai, Tokorozawa, JP;
Hideki Yasuoka, Takasaki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148186 ; 2957 / ; 2957 / ; 148-15 ; 148187 ; 357 34 ; 357 91 ;
Abstract
The present invention relates to a method of manufacturing a semiconductor integrated circuit device, especially a Bi-MOS IC. It comprises:
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Anzai, Norio. (1985). Method of forming bifets by forming isolation regions connected by (U.S. Patent No. 4529456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4529456
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile