The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1985
Filed:
Jun. 30, 1983
Edgar F Steigmeier, Hedingen, CH;
Heinrich Auderset, Horgen, CH;
RCA Corporation, Princeton, NJ (US);
Abstract
A method of determining the crystalline or structural quality of phase transformable material such as silicon uses light scattering. The material is exposed to a beam of light of a selected wavelength. Scattered light having an intensity above a threshold is detected to provide a signal which is used to control the intensity of a display beam of a visual display device. The threshold is varied to thereby vary the display beam intensity so as to provide the minimum intensity of display beam which yields a full display. The value of the thusly adjusted threshold intensity is used as a direct measure of the structural quality of the material. The light scattering process is used to determine the phase of deposited material. A layer of silicon material annealed from as-deposited amorphous phase material is easily and quickly distinguished from material as-deposited crystalline phase material and subsequently annealed.