The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1985
Filed:
Dec. 02, 1982
Applicant:
Inventor:
Jacob Riseman, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C23F / ;
U.S. Cl.
CPC ...
29590 ; 29571 ; 2957 / ; 29578 ; 148-15 ; 148187 ; 357 34 ; 357 15 ; 357 91 ; 427 84 ; 427 88 ;
Abstract
A metal silicide contact to silicon devices which has broad application to almost all of the variety of silicon semiconductor devices is described. This contact with a substantial side component has particular advantage as the base contact for a bipolar transistor. However, contacts can be made to regions of any desired device regions with a variety of P+, N+, P, N, P-, N- and so forth conductivity types. Further, the contact can be an ohmic or Schottky contact.