The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1985
Filed:
Sep. 13, 1983
Applicant:
Inventors:
Shunichi Hiraki, Hiratsuka, JP;
Hiroshi Kinoshita, Yokohama, JP;
Kuniaki Kumamaru, Kitakyushu, JP;
Shigeo Koguchi, Kitakyushu, JP;
Toshio Yonezawa, Yokosuka, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 2957 / ; 148187 ; 148D / ; 148D / ; 148D / ;
Abstract
A process for producing a semiconductor device by which the minority carrier lifetime can be selectively changed in a semiconductor device. A radiation beam is irradiated onto the surface of a semiconductor substrate to shorten the minority carrier lifetime. Then ions are selectively implanted into a region in which the minority carrier lifetime is to be recovered. Finally, the resultant structure is annealed.