The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 1985

Filed:

Nov. 03, 1983
Applicant:
Inventors:

Masaharu Aoyama, Fujisawa, JP;

Masahiro Abe, Yokohama, JP;

Takashi Ajima, Kamakura, JP;

Toshio Yonezawa, Yokosuka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 88 ; 156643 ; 156656 ; 427 89 ; 427 90 ;
Abstract

A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.


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