The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1985
Filed:
Apr. 14, 1982
Applicant:
Inventors:
Shuitsu Matsuo, Atsugi, JP;
Yasuhiro Imanishi, Tokyo, JP;
Hideo Nagashima, Ebina, JP;
Masaharu Watanabe, Yokohama, JP;
Toshiro Usami, Yokohama, JP;
Hisashi Muraoka, Yokohama, JP;
Assignees:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
422246 ; 422249 ; 156608 ; 1566 / ; 156D / ; 156D / ; 432264 ; 432265 ; 427 94 ;
Abstract
An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.