The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1985
Filed:
Jul. 09, 1982
Applicant:
Inventors:
Hitendra Ghosh, Bloomfield Hills, MI (US);
Ashok Murgai, Wappingers Falls, NY (US);
Wolfgang A Westdorp, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156601 ; 1566 / ; 156D / ; 156618 ;
Abstract
An improved method of growing silicon crystals by the Czochralski method to obtain a desired oxygen concentration level with both axial and radial uniformity. A crucible is located within a heater to achieve a given temperature profile which is related to the oxygen concentration, and then raised and rotated at an increasing speed together with a high crystal rotation rate to achieve the uniformity.