The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1985
Filed:
May. 31, 1983
Applicant:
Inventors:
Hideaki Doi, Fukushima, JP;
Kenichi Kokubun, Fukushima, JP;
Teruo Sakagami, Fukushima, JP;
Naohiro Murayama, Fukushima, JP;
Assignee:
Kureha Kagaku Kogyo Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C08F / ;
U.S. Cl.
CPC ...
5253273 ; 5253292 ; 5253303 ; 5253314 ; 5253334 ; 5253593 ; 526284 ;
Abstract
The photoresist material comprises a polymer having chloromethyl groups introduced therein and containing 2-isopropenylnaphthalene as one component, an average substitution degree of the chloromethyl groups based on the polymer is within a range of 0.2 to 5. The photoresist material has a high glass transition point, a high sensitivity to radiation and an excellent dry etching resistance, whereby it is suitably used for the manufacture of a semiconductor element using radiation and provides a good resolution on etching.