The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1985
Filed:
Jun. 25, 1982
Jerome D Schick, LaGrangeville, NY (US);
Howard R Wilson, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A non-volatile semiconductor memory and switching device employing a Schottky barrier junction and a dual layered dielectric system for entrapping charges adjacent thereto. The dual layered dielectric system typically comprises a layer of nitride on a layer of oxide arranged such that trapped charges within the oxide and at the nitride-oxide interface act to alter the depletion region beneath, and in the vicinity of, the Schottky contact. Trapped charges may be made to selectively modify the Schottky barrier depletion region and vary its conductivity characteristics between a diode characteristic (OFF) at one extreme and ohmic contact (ON) at the other, all in accordance with the magnitude and sign of the trapped charges.