The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1985
Filed:
Sep. 22, 1983
Applicant:
Inventors:
Kazufumi Azuma, Hiratsuka, JP;
Mitsuo Nakatani, Yokohama, JP;
Kazuo Nate, Machida, JP;
Masaaki Okunaka, Fujisawa, JP;
Hitoshi Yokono, Fujisawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427 531 ; 427 541 ; 427 86 ; 427 93 ; 427 94 ;
Abstract
A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.