The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1985
Filed:
Mar. 01, 1983
Kamal Tabatabaie-Alavi, Cambridge, MA (US);
Abu N Choudhury, Belmont, MA (US);
Nancy J Slater Gabriel, Cambridge, MA (US);
Clifton G Fonstad, Arlington, MA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method for Ion implantation using multiple energy Be.sup.+ to produce p-type regions in n-In.sub.0.53 Ga.sub.0.47 As. A simple technique is used to develop capless annealing of InGaAs up to 700.degree. C. The ion implantation of silicon is then accomplished to create n.sup.+ layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.