The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Apr. 19, 1982
Sidney I Soclof, San Gabriel, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A light emitting bipolar transistor, adapted to produce light from cathodoluminescence, upon being biased into conduction, the light emitting bipolar transistor being formed on the top surface of a relatively flat semiconductor substrate and having active regions comprising: a collector region, and an emitter region, the collector and emitter regions being of a first conductivity type, and an extended base region of a second conductivity type, the extended base region being interposed between the collector and the emitter regions, and the base region having a coatable surface, a phosphor coating, the phosphor coating covering the base region coatable surface, and respective connections to the collector emitter and base regions; whereby, biasing the transistor into conduction produces an electric field in the base region, the electric field in the base field inducing electrons in the base region to increase energy to a high energy level and to drift, some drifting high energy electrons being scattered into the phosphor coating, thereby impacting the phosphor and producing light by cathodoluminescence.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile