The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1984
Filed:
May. 03, 1982
Roger I Kung, Beaverton, OR (US);
Jonathan N Spitz, Beaverton, OR (US);
Stephen T Flannagan, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for testing an MOS, dynamic random-access memory employing full capacitance dummy cells is described. During probe testing a potential higher than the reference potential is applied to the dummy cells when reading binary zeroes from the memory and a potential lower than the reference potential is applied to the dummy cells when reading binary zeroes from the memory. This testing procedure detects weak cells and amplifiers and helps present the packaging of defective parts. In addition, a simplified means for programming redundant elements is described which requires substantially less substrate area than previous methods.