The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1984
Filed:
Dec. 19, 1983
Applicant:
Inventor:
Jer-shen Maa, Somerset County, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 148186 ; 156646 ; 156651 ; 156657 ; 1566591 ; 156662 ; 2041 / ; 252 791 ;
Abstract
A method is disclosed of forming elongated strips, e.g. interconnections, of a doped polycrystalline silicon/refractory metal silicide structure having a width less than about one micrometer over a vertical step in a substrate wherein the walls of the substrate, after etching, are free of impurity deposits called stringers. The subject method comprises isotropically etching said structure utilizing a resist pattern having a width substantially larger than one micrometer, redefining the resist pattern to the desired width and anisotropically etching the structure to the desired width.