The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 1984
Filed:
Jul. 30, 1982
Applicant:
Inventors:
Kohei Ehara, Kodaira, JP;
Susumu Muramoto, Hachioji, JP;
Takashi Morimoto, Tokorozawa, JP;
Seitaro Matsuo, Hachioji, JP;
Manabu Itsumi, Hoya, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 39 ; 156628 ; 156647 ; 156657 ; 156662 ; 427 88 ; 427 93 ; 427 94 ; 427259 ; 430314 ;
Abstract
A semiconductor manufacturing method which uses a refractory metal as a lift-off material and employs, in combination, a dry etching process suitable for forming a miniature pattern without undercutting and a film deposition method for deposing the lift-off material with directionality in a direction perpendicular to the substrate surface. A semiconductor device is fabricated by a lift-off method which is free from the fear of contamination, permits easy lift off of the lift-off material, even if large in area, and hence suitable for the formation of a high-density pattern.