The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 1984
Filed:
Oct. 19, 1981
Applicant:
Inventors:
Israel Beinglass, Santa Clara, CA (US);
Nan-Hsiung Tsai, Fremont, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01C / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 2957 / ; 156653 ; 156648 ; 357 59 ;
Abstract
A process for forming a resistor structure which comprises a polysilicon strip having a resistor region with tungsten leads formed on opposite ends of the strip. A protective oxide is grown on the sides of the silicon strip preventing undercutting of the oxide layer disposed beneath this strip. This prevents formation of the tungsten under the strip or along the sides of the strip which would otherwise place stress on the strip in addition causing other problems.