The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1984
Filed:
May. 11, 1981
Jay A Shideler, San Mateo, CA (US);
Robert L Berry, Cupertino, CA (US);
Fairchild Camera & Instrument Corporation, Mountain View, CA (US);
Abstract
A lateral bipolar transistor having a base width of 0.5 micron or less is made by forming a protective layer on an electrically insulating layer along a surface of a semiconductor body, forming an open space through the protective layer so as to define a guiding edge for it, introducing a first semiconductor dopant of a selected conductivity type into the body using the guiding edge to control the lateral extent of the first dopant, etching the insulating layer back under the protective layer a selected distance from the guiding edge, oxidizing material of the body exposed by the open space in the protective and insulating layers to form a composite electrically insulating region, removing the remainder of the protective layer, etching the insulating region sufficiently long to create an open space through it and thereby define another guiding edge, and introducing a second semiconductor dopant of the selected conductivity type into the body using this second guiding edge to control the lateral extent of the second dopant toward the first dopant and thereby to control the resulting base width.