The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1984
Filed:
Mar. 26, 1982
Eiichi Maruyama, Kodaira, JP;
Toshikazu Shimada, Tokyo, JP;
Yasuhiro Shiraki, Hino, JP;
Yoshifumi Katayama, Tokorozawa, JP;
Hirokazu Matsubara, Tokyo, JP;
Akitoshi Ishizaka, Kokubunji, JP;
Yoshimasa Murayama, Koganei, JP;
Akira Shintani, Machida, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element. The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.