The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1984
Filed:
Dec. 07, 1981
Applicant:
Inventors:
Eliezer Kinsbron, Highland Park, NJ (US);
William T Lynch, Summit, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C23C / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2041 / ; 156643 ;
Abstract
This invention involves the defining of a submicron feature (21 or 93) in a structure, typically an insulated gate field effect transistor structure (30, 40, or 110). This feature is defined by a sidewall oxide protective masking layer (21 or 71) formed by reactive oxygen ion etching of the structure being built at a time when an exposed surface thereof in the vicinity of the sidewall contains atoms of a material--for example, silicon or aluminum--which combine with the oxygen ions to form the sidewall oxide layer.