The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1983
Filed:
Aug. 24, 1981
Applicant:
Inventor:
Andrew C Tickle, Los Altos, CA (US);
Assignee:
Fairchild Camera and Instrument Corporation, Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ;
U.S. Cl.
CPC ...
427-8 ; 29574 ; 29575 ; 427 93 ; 427 94 ; 427140 ;
Abstract
Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.
Tickle, Andrew. (1983). Method of detecting and repairing latent defects in a semiconductor (U.S. Patent No. 4420497). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4420497
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile