The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 1983

Filed:

Nov. 27, 1981
Applicant:
Inventor:

Frederick T Turner, Sunnyvale, CA (US);

Assignee:

Varian Associates, Inc., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
204298 ; 118504 ; 118720 ; 2041 / ;
Abstract

Apparatus for compensating for asymmetric signatures in semiconductor processes. An asymmetric thickness profile is obtained in a sputter coating system by using a shield placed in an asymmetric position with respect to the center of a symmetric sputtering system such as a circularly symmetric sputtering system. A sputter coated layer is obtained which has the asymmetric character of the shield and its placement. When the substrate is placed in subsequent equipment having asymmetric etch characteristics, the resultant film has a uniform thickness or a known contour.


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