The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 1983
Filed:
Mar. 01, 1983
Applicant:
Inventors:
Kamal Tabatabaie-Alavi, Cambridge, MA (US);
Abu N Choudhury, Belmont, MA (US);
Nancy J Gabriel, Cambridge, MA (US);
Clifton G Fonstad, Arlington, MA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C25D / ; C25D / ; C25D / ;
U.S. Cl.
CPC ...
204 15 ; 204 40 ;
Abstract
A method for obtaining a very low resistance ohmic contact on p-type Indium hosphide (InP) by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producing patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.