The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1983
Filed:
Jun. 30, 1981
Hu H Chao, Yorktown Heights, NY (US);
Robert H Dennard, Cortlandt, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A one-device, FET dynamic random access memory array is disclosed wherein a problem arising from the short-channel effect is reduced in single-polysilicon, one-device field effect transistor dynamic random access memory arrays where a portion of a word line is used as an electrode of a memory cell storage capacitor. When such word lines are accessed, boosted voltages can appear across the source-drain of FET devices of unaccessed memory cells causing them to conduct and spuriously lose information. This problem is minimized in such memory arrays by opening a pair of bit line switches so that the potential on an unselected bit line remains at the potential to which it was precharged. In this manner, the potential difference across the source-drain of the FETs of unselected memory cells can never exceed the potential to which all the bit lines are precharged.