The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1983
Filed:
Jan. 21, 1982
Kenji Nagashima, Tokyo, JP;
Hiroshi Matsumoto, Yokohama, JP;
Masataka Tanaka, Kitakyushu, JP;
Hirosi Oodaira, Chigasaki, JP;
Nobuo Iwase, Yokosuka, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al.sub.2 O.sub.3 layer on a metal substrate, a step of forming on the Al.sub.2 O.sub.3 layer a resist layer having a pattern opposite to that of a copper layer which will be formed on the Al.sub.2 O.sub.3 layer by a later step, a step of forming the copper layer on the Al.sub.2 O.sub.3 layer using the resist layer as a mask, a step of impregnating thermosetting material into both the Al.sub.2 O.sub.3 layer and the copper layer, and a step of providing at least one semiconductor element on the copper layer.