The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Aug. 18, 1981
Shinichi Sato, Hyogo, JP;
Hiroshi Harada, Hyogo, JP;
Takaaki Fukumoto, Hyogo, JP;
Hirozo Takano, Hyogo, JP;
Hideo Kotani, Hyogo, JP;
Shinpei Kayano, Hyogo, JP;
Abstract
A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 .mu.m or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor device with nitrogen ions using a direct ion beam imaging technique. The ion bombardment layer is converted into an oxidation-resistant layer by annealing, and an insulating oxide layer is formed on the surface of the substrate in regions other than those on which the oxidation-resistant layer is formed by oxidation. Thereafter, contact recesses are formed upon removing the oxidation-resistant layer.