Polymeric insulation layer etching process and composition

Abstract

In a process for fabricating semiconductor devices having a patterned polyimide (PI) or polyimide-iso-indroquinazalinedione (PIQ) insulating layer on the device, a layer of uncured PI or PIQ resin is applied on a surface of the device. The resin layer is heated to produce a first level of partial curing in the resin layer. A photoresist is applied to the partially cured resin layer where it is to be removed. The partially cured resin layer is etched to produce the patterned layer. The patterned layer is then heated to produce a second level of partial cure, sufficient to prevent organic photoresist strippers from attacking the patterned layer. The developed photoresist is then stripped with an organic photoresist stripper, and the patterned layer heated a third time a sufficient extent to complete the curing of the PI and PIQ resin. The process desirably uses etching compositions comprising an amine etchant having the formula R--CH.sub.2 --CH.sub.2 --NH.sub.2, where R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, or an etchant comprising a mixture of quaternary ammonium hydroxide and an N-alkyl-pyrrolidinone. In both cases, water may be used as a solvent for the etching compositions.