The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1983
Filed:
Dec. 09, 1982
Jer-shen Maa, Manville, NJ (US);
RCA Corporation, New York, NY (US);
Abstract
A method of forming and anisotropically etching a structure on a substrate, said structure being comprised of a layer of doped polycrystalline silicon having thereover a layer of tantalum silicide. The method comprises providing a layer of polycrystalline silicon on the substrate, doping the silicon to render it conductive, preparing the surface of the silicon for deposition of tantalum silicide by treatment with a carbon tetrafluoride/oxygen plasma, depositing tantalum silicide thereon tantalum rich, anisotropically plasma etching the two-layered structure with an etchant mixture of carbon tetrachloride, oxygen and nitrogen, annealing the tantalum silicide layer and, if desired, covering the resultant structure with a protective layer of oxide. In a preferred embodiment, the silicon layer is deposited in the amorphorus state and annealed to the polycrystalline state.