The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1983
Filed:
Apr. 27, 1981
Nippon Telegraph & Telephone Public Corporation, Tokyo, JP;
Abstract
A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile