The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1983
Filed:
Dec. 21, 1981
Applicant:
Inventors:
Valeria Platter, Poughkeepsie, NY (US);
Laura B Rothman, South Kent, CT (US);
Paul M Schaible, Poughkeepsie, NY (US);
Geraldine C Schwartz, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156652 ; 156653 ; 156656 ; 156664 ; 156665 ; 156667 ; 427 86 ; 427 89 ; 427 90 ; 4271263 ; 427307 ; 427404 ; 427405 ; 4274192 ; 430314 ; 430316 ; 430318 ; 430323 ; 430324 ;
Abstract
Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation. The hafnium coating is used to protect the aluminum metallization during mask removal, and as a registration enhancer for subsequent electron-beam processing.