The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1983
Filed:
Jun. 30, 1980
Applicant:
Inventors:
James R Gardiner, Wappingers Falls, NY (US);
Stanley R Makarewicz, New Windsor, NY (US);
Martin Revitz, Poughkeepsie, NY (US);
Joseph F Shepard, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 86 ; 427 89 ; 427 94 ; 156644 ; 156653 ; 156657 ;
Abstract
A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a 'polysilicon void phenomenon' is overcome by patterning an appropriate etch stop between the conductors.
Quick Actions:
Gardiner, James. (1983). Double polysilicon contact structure and process (U.S. Patent No. 4394406). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4394406
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile