The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 1983
Filed:
Jun. 30, 1981
Applicant:
Inventors:
Narasipur G Anantha, Hopewell Junction, NY (US);
Harsaran S Bhatia, Wappingers Falls, NY (US);
John L Mauer, IV, South Kent, CT (US);
Homi G Sarkary, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 148-15 ; 148187 ; 148188 ;
Abstract
A method for eliminating deposited residues, for example polysilicon residue, on vertical silicon dioxide sidewalls that have been reactive ion etched includes reshaping the sidewalls to have a slope of at least +30.degree. relative to the vertical direction of the sidewall.