The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1983
Filed:
Dec. 30, 1981
Applicant:
Inventors:
Shao-Fu Chu, Hopewell Junction, NY (US);
Allen P Ho, Sunnyvale, CA (US);
Cheng T Horng, San Jose, CA (US);
Bernard M Kemlage, Kingston, NY (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 156643 ; 156652 ; 156653 ; 156657 ;
Abstract
A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.