The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1983
Filed:
Nov. 05, 1981
Kisaku Nakamura, Funabashi, JP;
Eiji Jimi, Yokohama, JP;
Haruyuki Goto, Yokosuka, JP;
Akio Hori, Kawasaki, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
An improved semiconductor element-manufacturing method which saves a semiconductor wafer from the occurrence of cracks or damage during the manufacture of a semiconductor element and enables solder layers to be deposited without irregularities in the thickness. The method starts with the step of forming a first metal layer acting as an ohmic electrode on each side of the element regions of a semiconductor wafer in which a plurality of active elements are formed or on the whole surface of each side of the semiconductor wafer. Then a second metal layer which has an anticorrosive property and acts as a brazing material when the semiconductor element is mounted between a pair of electrodes is selectively deposited by electroplating on each of the element areas in the first metal layers. Finally, those portions of the semiconductor wafer which are interposed between the active elements are chemically etched off with the second metal layers used as masks to separate the semiconductor elements from each other, thereby producing a plurality of semiconductor elements, each of which has its surfaces coated with the first and second metal layers.