The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1983
Filed:
Dec. 14, 1981
Chi C Yang, Troy, MI (US);
Arun Madan, Birmingham, MI (US);
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
David Adler, Lexington, MA (US);
Energy Conversion Devices, Inc., Troy, MI (US);
Abstract
The disclosure is directed to photovoltaic devices having enhanced short circuit currents and efficiencies. The devices are made by depositing on a previously deposited doped amorphous semiconductor alloy layer a body of intrinsic amorphous semiconductor alloys including a first intrinsic layer, adjacent the doped layer, formed from the deposition of a non-etching starting material and a second intrinsic layer different in composition from the first intrinsic layer. The second intrinsic layer preferably includes silicon and fluorine while the first intrinsic amorphous alloy layer does not include fluorine. The first intrinsic layer may be formed by the glow discharge decomposition of silane gas alone. The thicknesses of the first and second intrinsic layers are adjusted so as to match the respective potential drops thereof with the first intrinsic layer being relatively thin as compared to the second intrinsic layer.