The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1983
Filed:
Jul. 08, 1981
Applicant:
Inventors:
Howard H Hansen, Underhill, VT (US);
Jerome B Lasky, Essex Junction, VT (US);
Ronald R Silverman, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 71 ; 427 531 ;
Abstract
A method for annealing ion implanted regions buried in a semiconductor substrate without the undesirable effects of thermal diffusion which includes the radiation of the substrate by a continuous laser having an emission frequency longer than 600 nanometers which the buried ion implanted regions will absorb strongly but which will be substantially unabsorbed by the unimplanted regions. Superior results can be obtained when the substrate is heated to approximately 300.degree. during this laser annealing.