The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 1983

Filed:

Sep. 14, 1981
Applicant:
Inventors:

Charles D Greskovich, Schenectady, NY (US);

John A Palm, Jonesville, NY (US);

Svante Prochazka, Ballston Lake, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264 65 ; 264 66 ; 264325 ; 501154 ;
Abstract

A silicon nitride compact with a density of 95% to 100% is produced by forming a particulate dispersion of silicon nitride and beryllium additive into a compact, firstly sintering the compact from about 1900.degree. C. to about 2200.degree. C. in nitrogen at superatmospheric pressure sufficient to prevent thermal decomposition of the silicon nitride until the entire outside surface of the compact becomes impermeable to nitrogen gas, and then secondly sintering the compact from about 1800.degree. C. to about 2200.degree. C. under a nitrogen pressure having a value at least twice the first nitrogen sintering pressure.


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