The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1983
Filed:
Apr. 01, 1981
Hiroshi Goto, Yokohama, JP;
Kenji Sugishima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Generally, a complicated process is required in manufacturing a semiconductor device containing a Schottky barrier diode and a polycrystalline silicon layer which prevents excessive reaction of the aluminum electrode and silicon material involved. Because of the inability of the aluminum electrode to provide a good Schottky barrier by its contact with the polycrystalline silicon layer, it is required to directly contact the electrode with a monocrystalline silicon semiconductor layer or substrate. According to the present invention, this process is simplified by monocrystallizing the polycrystalline silicon layer at least in the region in which a Schottky barrier diode is to be formed by annealing the silicon layer in said region by laser beam irradiation and applying an aluminum electrode thereto.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile