The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1983
Filed:
Apr. 07, 1980
Fujitsu Limited, Kawasaki, JP;
Abstract
A PROM (programmable read-only memory) device includes both PROM cells and peripheral circuits cooperating therewith with the PROM cells and peripheral circuits formed in and on the same bulk. The bulk is formed free of metal which acts as a life time killer. Further, in each of the PROM cells, a buffer layer made of a silicon semiconductor, is introduced between a metal electrode, acting as a bit line, and the surface of the bulk at the position where the PROM cell is formed. Furthermore, the peripheral circuits are made by using Schottky TTL (transistor transistor logic) circuits.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile