The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 1983

Filed:

Mar. 22, 1982
Applicant:
Inventors:

Baylor B Triplett, La Honda, CA (US);

Carlo Ferrando, Aptos, CA (US);

Guido Galli, Saratoga, CA (US);

Assignee:

Intel Magnetics, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
156655 ; 148171 ; 156662 ; 252 791 ;
Abstract

A process for removing a liquid phase epitaxial layer of material from a wafer substrate is disclosed. An etch melt is provided which is substantially the same as that used to grow the epitaxial layer on the wafer surface. The temperature of the etch melt is adjusted such that it exceeds an equilibrium temperature of the epitaxial layer, and lies below an equilibrium temperature of the substrate, such that the epitaxial layer is etched away without affecting the substrate material. The wafer is immersed and maintained within the melt until the epitaxial layer is removed. The wafer may then be reused without repolishing.


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