The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1982
Filed:
Dec. 08, 1980
Applicant:
Inventors:
Philippe Jarry, Sucy en Brie, FR;
Pierre Guittard, Montlhery, FR;
Alphonse Ducarre, Ste-Genevieve des Bois, FR;
Assignee:
U.S. Philips Corporation, Tarrytown, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 156638 ; 156662 ;
Abstract
In manufacturing a semiconductor device by epitaxial growth from the liquid phase on a substrate of layers of gallium arsenide or gallium aluminum arsenide doped with elements such as germanium, the last growth melt is wiped off and the structure is cooled to a temperature from room temperature to 200.degree. C. During cooling, the structure's upper surface is contacted with a liquid gallium melt in such a manner that the doping elements present in the few remaining drops of the last growth melt not removed by the wiping off are dissolved.