The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1982
Filed:
Jun. 12, 1980
Richard R Garnache, South Burlington, VT (US);
Donald M Kenney, Shelburne, VT (US);
Nandor G Thoma, Boca Raton, FL (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
High density VMOSFET devices, particularly single transistor memory cells, are provided by use of a series of simplified self-aligning process steps. Gate electrodes, source/drain regions and source/drain contacts are provided with the aid of an initial mask-less photoresist removal process in which a relatively thick layer of self-leveling photoresist is uniformly removed in order to define portions of a gate electrode within the recess of a V-groove. The gate electrode subsequently acts as a self-aligned mask to define implanted source/drain regions also within the V-groove and to enable second level interconnecting metallurgy contacts to be formed along the sidewalls of the V-groove.