The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1982
Filed:
Aug. 01, 1980
Applicant:
Inventor:
Yasunobu Kosa, Kodaira, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 148187 ; 357 52 ; 357 91 ;
Abstract
The invention relates to a method of fabricating a semiconductor device and is characterized by the steps of selectively forming a polycrystalline silicon layer for a gate electrode on a semiconductor substrate, forming selectively a nitride film by ion implantation into the surface of the substrate, on which the silicon layer is not formed, and thereafter oxidizing the surface of the silicon layer using the nitride film as a mask thereby to form an oxidation film on the silicon layer.
Kosa, Yasunobu. (1982). Method of fabricating a mis-type device by using a gate electrode and (U.S. Patent No. 4356041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4356041
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile