The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1982
Filed:
Apr. 28, 1981
Applicant:
Inventors:
Doris W Flatley, Belle Mead, NJ (US);
Sheng T Hsu, Lawrenceville, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 85 ; 357 54 ; 427 89 ; 427 95 ; 427 93 ; 156653 ; 430314 ;
Abstract
A process for defining improved tapered openings in glass coatings requires that passivating layers be formed of a doped silicon oxide having a relatively low flow temperature formed on a layer of undoped silicon oxide. After the contact openings are formed, both oxide layers are heated to a temperature below the flow temperature of the doped layer for a period of time sufficient to only soften and partially reflow the doped layer, the temperature being insufficient to form a significant oxide growth on the exposed portion of the semiconductor body.