The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1982
Filed:
Mar. 28, 1980
Applicant:
Inventors:
Assignee:
Nippon Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
365182 ; 29571 ; 148188 ; 357 23 ; 357 41 ; 357 59 ; 357 71 ;
Abstract
An integrated circuit device includes a first enhancement-type IGFET and a second depletion-type IGFET, each of which includes source and drain regions formed in the upper surface of a semiconductor substrate. Both IGFETs include a gate insulator film formed over their channel regions, the first IGFET having a high melting point metal gate electrode formed over its gate insulator without contacting the substrate surface and the second IGFET having a polycrystalline semiconductor gate electrode which directly contacts the substrate at a source/drain region common to the two IGFETs. Such a structure is used to form part of a semiconductor memory device having word lines of high melting point metal.