The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1982
Filed:
Aug. 14, 1980
Tokuda Seisakusyo, Ltd., Zama, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
A plasma etching method includes placing a workpiece including an aluminum-based film with an exposed portion on a cathode arranged in opposition to an anode. A plasma generating gas consisting of carbon tetrachloride and chlorine is introduced between the cathode and the anode at a pressure of 0.1 Torr or less. The ratio of the partial pressure of the chlorine to the total pressure of the plasma generating gas is 0.8 or less. Then, a high frequency electric power is applied between the cathode and the anode to generate a plasma from the plasma generating gas. The exposed portion of the aluminum-based film is etched by the plasma thus generated.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile