The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1982
Filed:
Dec. 05, 1980
Robert F Bartholomew, Poughkeepsie, NY (US);
Paul L Garbarino, Ridgefield, CT (US);
James R Gardiner, Wappingers Falls, NY (US);
Martin Revitz, Poughkeepsie, NY (US);
Joseph F Shepard, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A buried electrical contact is made to a substrate of monocrystalline silicon through a relatively thin layer of silicon dioxide without causing damage to the relatively thin layer of silicon dioxide. This is accomplished through depositing a thin layer of polycrystalline silicon over the relatively thin layer of silicon dioxide prior to forming the opening in the relatively thin layer of silicon dioxide for the electrical contact to the substrate. After the thin layer of polycrystalline silicon is deposited, an opening is formed therein so that the thin layer of polycrystalline silicon functions as a mask to etch a corresponding opening in the relatively thin layer of silicon dioxide. Then, a layer of polycrystalline silicon is deposited over the exposed surface of the substrate and the thin layer of polycrystalline silicon to form the electrical contact through the opening in the relatively thin layer of silicon dioxide to the substrate.