The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 1982

Filed:

Jul. 28, 1980
Applicant:
Inventors:

Toshio Kurahashi, Yokohama, JP;

Kazuo Tokitomo, Aizuwakamatsu, JP;

Tadashi Kiriseko, Kanagawa, JP;

Assignee:

Fujitsu Limited, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 93 ; 1566591 ; 427 88 ; 427 89 ; 427 95 ; 427 96 ; 427259 ; 430314 ;
Abstract

In a method of manufacturing semiconductor devices, liquid glass is applied to the substrate of a semiconductor device to cover the upper surface of a film of photoresist formed on a conductor layer of the substrate and used as an etching mask for patterning the conductor layer. The substrate is baked at a sufficiently high temperature to harden the liquid glass and deform and shrink the photoresist film to expose the sides of such film. The photoresist film is removed. The hardened liquid glass on the photoresist film is simultaneously removed by lift off.


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