The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 1982

Filed:

Oct. 07, 1980
Applicant:
Inventors:

Joseph P Sattler, Silver Spring, MD (US);

Terrance L Worchesky, Silver Spring, MD (US);

Kenneth J Ritter, Adelphi, MD (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B / ;
U.S. Cl.
CPC ...
356349 ; 356361 ;
Abstract

A method and apparatus for simply and accurately determining the index of refraction of semiconductor materials, etalon bars and materials transparent to infrared radiation. The channel spectra of the material is obtained by passing through it a portion of radiation from a continuously tuned diode laser. Another portion of the diode laser radiation is heterodyned with radiation from a CO.sub.2 laser to obtain heterodyne marker beats. The channel spectra and marker beats are displayed in conjunction whereby the frequency difference between the marker beats can be related to the number of fringes in the channel spectra between the marker beats.


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